Carrier scattering mechanisms in P-type indium selenide
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Abstract
Carrier scattering mechanisms in p-indium selenide are investigated by means of the temperature dependence of the Hall mobility (160–500 K) and thermopower (200–300 K). An anomalous behaviour of the Hall voltage, which changes sign below 215 K, is interpreted through the existence of planar aggregates of ionized shallow donor impurities that create potential wells behaving as deep donors and in which a low concentration of two-dimensional free electrons can exist. This fact is taken into account through equations for two-carrier Hall effect. Holes are found to be predominantly scattered by anA ′1 homopolar phonon with an energy of 27.8 meV. From thermopower results, the density of states effective mass in the valence band is determined,mdv*=(1.5±0.2)m0.
DOI: 10.1007/BF00619716
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Casanovas</name><affiliation wicri:level="1"><mods:affiliation>Departamento de Termologia, Facultad de Física, E-46100, Burjassot (Valencia), Spain</mods:affiliation><country xml:lang="fr">Espagne</country><wicri:regionArea>Departamento de Termologia, Facultad de Física, E-46100, Burjassot (Valencia)</wicri:regionArea><wicri:noRegion>Burjassot (Valencia)</wicri:noRegion></affiliation></author><author><name>A. Cantarero</name><affiliation wicri:level="1"><mods:affiliation>Departamento de Fisica Aplicada, Facultad de Física, E-46100, Burjassot, Valencia, Spain</mods:affiliation><country xml:lang="fr">Espagne</country><wicri:regionArea>Departamento de Fisica Aplicada, Facultad de Física, E-46100, Burjassot, Valencia</wicri:regionArea><wicri:noRegion>Valencia</wicri:noRegion></affiliation></author><author><name>J. Martinez-Pastor</name><affiliation wicri:level="1"><mods:affiliation>Departamento de Fisica Aplicada, Facultad de Física, E-46100, Burjassot, Valencia, Spain</mods:affiliation><country xml:lang="fr">Espagne</country><wicri:regionArea>Departamento de Fisica Aplicada, Facultad de Física, E-46100, Burjassot, Valencia</wicri:regionArea><wicri:noRegion>Valencia</wicri:noRegion></affiliation></author><author><name>A. Chevy</name><affiliation wicri:level="3"><mods:affiliation>Laboratoire de Physique des Milieux Condensés, 4 Place Jussieu, Tour 13, 4ème étage, F-75230, Paris Cedex 05, France</mods:affiliation><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire de Physique des Milieux Condensés, 4 Place Jussieu, Tour 13, 4ème étage, F-75230, Paris Cedex 05</wicri:regionArea><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Paris</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:339_1989_Article_BF00619716.pdf</idno><date when="1989">1989</date><idno type="doi">10.1007/BF00619716</idno><idno type="wicri:Area/Main/Corpus">000C16</idno><idno type="wicri:Area/Main/Curation">000C16</idno><idno type="wicri:Area/Main/Exploration">000502</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>72,10</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Carrier scattering mechanisms in p-indium selenide are investigated by means of the temperature dependence of the Hall mobility (160–500 K) and thermopower (200–300 K). An anomalous behaviour of the Hall voltage, which changes sign below 215 K, is interpreted through the existence of planar aggregates of ionized shallow donor impurities that create potential wells behaving as deep donors and in which a low concentration of two-dimensional free electrons can exist. This fact is taken into account through equations for two-carrier Hall effect. Holes are found to be predominantly scattered by anA ′1 homopolar phonon with an energy of 27.8 meV. From thermopower results, the density of states effective mass in the valence band is determined,mdv*=(1.5±0.2)m0.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="d4d300bdb93e1f9dca037dcb4a53cff17420d648"><titleInfo lang="eng"><title>Carrier scattering mechanisms in P-type indium selenide</title></titleInfo><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Segura</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Departamento de Fisica Aplicada, Facultad de Física, E-46100, Burjassot, Valencia, Spain</affiliation></name><name type="personal"><namePart type="given">C.</namePart><namePart type="family">Martinez-Tomás</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Departamento de Fisica Aplicada, Facultad de Física, E-46100, Burjassot, Valencia, Spain</affiliation></name><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Casanovas</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Departamento de Termologia, Facultad de Física, E-46100, Burjassot (Valencia), Spain</affiliation></name><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Cantarero</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Departamento de Fisica Aplicada, Facultad de Física, E-46100, Burjassot, Valencia, Spain</affiliation></name><name type="personal"><namePart type="given">J.</namePart><namePart type="family">Martinez-Pastor</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Departamento de Fisica Aplicada, Facultad de Física, E-46100, Burjassot, Valencia, Spain</affiliation></name><name type="personal"><namePart type="given">A.</namePart><namePart type="family">Chevy</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Laboratoire de Physique des Milieux Condensés, 4 Place Jussieu, Tour 13, 4ème étage, F-75230, Paris Cedex 05, France</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, Berlin/Heidelberg</publisher><dateCreated encoding="w3cdtf">1988-06-10</dateCreated><dateCaptured encoding="w3cdtf">1988-09-15</dateCaptured><dateValid encoding="w3cdtf">2004-10-26</dateValid><copyrightDate encoding="w3cdtf">1989</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Carrier scattering mechanisms in p-indium selenide are investigated by means of the temperature dependence of the Hall mobility (160–500 K) and thermopower (200–300 K). An anomalous behaviour of the Hall voltage, which changes sign below 215 K, is interpreted through the existence of planar aggregates of ionized shallow donor impurities that create potential wells behaving as deep donors and in which a low concentration of two-dimensional free electrons can exist. This fact is taken into account through equations for two-carrier Hall effect. Holes are found to be predominantly scattered by anA ′1 homopolar phonon with an energy of 27.8 meV. From thermopower results, the density of states effective mass in the valence band is determined,mdv*=(1.5±0.2)m0.</abstract><subject lang="eng"><genre>PACS</genre><topic>72,10</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>Appl. Phys. A</title></titleInfo><titleInfo><title>Applied Physics A</title><subTitle>Materials Science and Processing</subTitle><partNumber>Year: 1989</partNumber><partNumber>Volume: 48</partNumber><partNumber>Number: 5</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1989-05-01</dateIssued><copyrightDate encoding="w3cdtf">1989</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Optical and Electronic Materials</topic><topic>Nanotechnology</topic><topic>Characterization and Evaluation Materials</topic><topic>Surfaces and Interfaces, Thin Films</topic><topic>Condensed Matter</topic><topic>Operating Procedures, Materials Treatment</topic></subject><identifier type="issn">0947-8396</identifier><identifier type="issn">Electronic: 1432-0630</identifier><identifier type="matrixNumber">339</identifier><identifier type="local">IssueArticleCount: 18</identifier><recordInfo><recordOrigin>Springer-Verlag, 1989</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00619716</identifier><identifier type="matrixNumber">Art7</identifier><identifier type="local">BF00619716</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>445</start><end>450</end></extent></part><recordInfo><recordOrigin>Springer-Verlag, 1989</recordOrigin><recordIdentifier>339_1989_Article_BF00619716.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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